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General Description. This device is suitable for use in PWM, load switching and general purpose applications. Top View. Drain Connected. Drain-Source Voltage. Gate-Source Voltage. Continuous Drain. Pulsed Drain Current C. Avalanche Current C. Power Dissipation B. Junction and Storage Temperature Range. Thermal Characteristics. Maximum Junction-to-Ambient A. Maximum Junction-to-Case B. B V DSS. Drain-Source Breakdown Voltage. Zero Gate Voltage Drain Current. Gate-Body leakage current. GS th.
Gate Threshold Voltage. On state drain current. Static Drain-Source On-Resistance. DS ON. Diode Forward Voltage.
Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Gate resistance. Total Gate Charge. Gate Source Charge. Gate Drain Charge. Turn-On DelayTime. Turn-On Rise Time. D off. Turn-Off DelayTime. Turn-Off Fall Time. Body Diode Reverse Recovery Time. Body Diode Reverse Recovery Charge. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming.
The maximum current rating is limited by bond-wires. Rev 2 : Feb 7. V G S Volts. Figure 2: Transfer Characteristics. Drain Current and Gate Voltage. Operating Area Note F. This datasheet has been downloaded from:.
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Carousel Previous Carousel Next. Eliminating Oscillation Between Parallel Mnosfets. Jump to Page. Search inside document. R DS ON. Normalized On-Resistance. Figure 4: On-Resistance vs. Junction Temperature.
V GS Volts. R DS ON limited. I D Amps. Capacitance nF. In descending. Single Pulse. Normalized Transient. Thermal Resistance.
Current rating I D A. Power Dissipation W. Deeksha Gowda. Divyadeep Gupto. Jaime Gonzalez. Andres Felipe Marin. Pandu Sandi Pratama.
Enrique Trascastro. Ciprian Biris. Shanmuga Priya. Marcio Santos. Nishiya Vijayan. Sy Phan Minh. Adriana Charry. Jesus Sanchez. Endang Suhendar. Benedict Madriaga. Ansar Niazi. Valdenor Costa. Rahmat Yudita. Diego Grisales. Swapna Logeswari.
N-Channel Enhancement Mode Field Effect Transistor
AOT430 MOSFET. Datasheet pdf. Equivalent
AOT430 N-Channel Enhancement Mode Field Effect Transistor: Features General Description